Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

The Auger electron spectroscopy method confirmed a high concentration of carbon atoms (~ 85 at.%) introduced into silicon by cold implantation recoil atoms. Carbon are concentrated in thin 5 nm) near-surface region silicon. Annealing such structure did not reveal noticeable diffusion carbon, which prevents obtaining layer SiC with thickness more than few nm. This problem was solved using radiation-enhanced diffusion. made it possible to control the distribution profiles wide range. at 1150 o C allowed layers amorphous-crystalline 50-150 Higher annealing temperatures required obtain single-crystal film. Keywords: implantation, diffusion, carbide, atom, films.